Nowadays, the application of high-power semiconductor lasers covers almost all high-tech fields including military aerospace, industrial production, medical and health care, including data storage, optical fiber communication, laser fuze, holographic technology, scanning printing, entertainment performance, etc. The reason is because of its own many advantages, such as low price, strong integration, low power consumption and high efficiency. 808nm high-power semiconductor laser is a kind of semiconductor laser that started earlier and studied more deeply. One of its most important applications is as a pump source for solid-state lasers. Now it has basically replaced the traditional lamp pump source. The main reason is Or because of the high conversion efficiency that traditional lamp pumping cannot achieve. 905nm high-power semiconductor lasers are harmless to human eyes, so they are widely used in laser eye therapy, infrared night vision, virtual reality and so on. The semiconductor lasers designed in this paper all adopt a large cavity structure, which can not only improve the damage threshold of the catastrophic cavity surface, but also suppress high-order mode lasing. The quantum well of 808nm semiconductor laser adopts InAlGaAs and GaAsP respectively, and the use of aluminum-free GaAsP quantum well is beneficial to improve the reliability of the device. The 905nm laser adopts a multi-active region tunnel cascade structure, which can significantly improve the internal quantum efficiency of the laser. This paper mainly studies 808nm and 905nm high-power semiconductor lasers from the following aspects: First, the development history, research status and applications of semiconductor lasers are introduced. Secondly, the working principle and precautions of epitaxial wafer growth equipment and testing equipment are expounded. In this laboratory, the EMCORE D125 metal-organic compound vapor deposition (MOCVD) system of Vecco company in the United States is used for epitaxial wafer growth. The test equipment is the PLM-100 optical fluorescence spectrum test system of Philips company and the electrochemical C-V model of Accent PN4400. (ECV) test system. Then, the design process of a typical strained quantum well semiconductor laser is introduced, including the calculation of the bandgap of the strained quantum well, the calculation of the band order, the relationship between the lasing wavelength and the quantum well material composition and well width, etc. The simulation uses a Kohn-Luttinger Hamiltonian based transfer matrix. Based on the above theory, simulations were carried out on the active region of the 808nm and 905nm semiconductor lasers to determine the material composition and well width of the quantum wells. The 808nm semiconductor laser quantum wells used 10nm In0.14Al0.11Ga0.75As and 12nm respectively. The GaAs0.84P0.16, 905nm semiconductor laser quantum well adopts 7nm In0.1Ga0.9As, and the active region adopts double quantum well structure. The barrier layer and waveguide layer of 808nm and 905nm semiconductor lasers are Al0.3Ga0.7As, and the confinement layer is Al0.5Ga0.5As. On this basis, the MOCVD epitaxial growth is carried out on the active region structure, and the structure and epitaxial conditions are optimized according to the PL test results, and finally the optimized active region structure is obtained. Finally, on the basis of the quantum well active region after epitaxy optimization, by increasing the thickness of the waveguide layer, confinement layer, cap layer, etc., and doing appropriate doping, the structure is epitaxially grown by MOCVD epitaxy system, and then the structure is subjected to photolithography. , corrosion, deposition, sputtering, cleavage, coating, sintering, pressure welding, packaging and other post-processes, the finished laser die is prepared. The pros and cons of performance
